Jeremy Rashid
European Patent Attorney / U.S. Patent Agent
Boston
London
Jeremy Rashid
European Patent Attorney / U.S. Patent Agent
Boston
London
Contact details
Jeremy is an experienced European patent attorney and U.S. patent agent in the firm’s Intellectual Property practice based in the Boston and London offices. He serves his clients by drawing on his technical and legal acumen developed in more than a decade in engineering and law. His experience enables him to take a client centric approach leading him to become a trusted advisor to leading technology companies.
Jeremy represents technology companies, with technologies that include semiconductor devices, memory systems, satellite and defense technologies, computer implemented inventions and business transaction systems. He is also familiar with medical devices, having worked on a large portfolio of multi-jurisdictional cases dealing with endosurgical tools, ultrasonic cauterization equipment, suturing tools, medical imaging systems, analyte test meters, stent technology, wound dressings and irrigation systems. His work includes drafting and prosecuting U.S., European and international patent applications, advising clients on freedom to operate issues, and assessing patent infringement and validity. Jeremy has experience with representation before the United States Patent and Trademark Office and the European Patent office.
Jeremy draws on his deep technical knowledge base on his doctoral research focused on wide bandgap semiconductor physics and devices, and high temperature electronic packaging for automotive applications; as well as his masters research focused on silicon carbide power semiconductor devices.
Office
Boston
One Beacon Street
Boston
MA 02108
London
One Bishops Square
London
E1 6AD
Qualifications
Professional
United Stated Patent and Trademark Office
European Patent Office
Academic
PhD, Electrical Engineering, University of Cambridge, 2007
MPhil, Electrical Engineering, University of Cambridge, 2003
BEng (Hns), National University of Singapore, 2002
Office
Boston
One Beacon Street
Boston
MA 02108
London
One Bishops Square
London
E1 6AD
Qualifications
Professional
United Stated Patent and Trademark Office
European Patent Office
Academic
PhD, Electrical Engineering, University of Cambridge, 2007
MPhil, Electrical Engineering, University of Cambridge, 2003
BEng (Hns), National University of Singapore, 2002
Published work
- Lead Author, “Numerical parameterisation of CVD single crystal diamond,” IEEE Transactions on Electron Devices, 2008, vol. 55, pp. 2744‐56.
- Lead Author, “δ‐Doped Single Crystal Diamond Schottky m‐i‐p+ Diodes,” 2008, IEEE Power Semiconductor Devices and ICs, 2008, pp. 249‐52.
- Co-Author, “Novel Packaging Techniques for High Power Electronics in SiC,” Material Science Forum, 2007, vols. 556‐557, pp. 971‐74.
- Co-Author, “High Temperature Direct Cooled Inverter Module for Hybrid Electric Vehicle Application,” Material Science Forum, 2007, vols. 556‐557, pp. 709‐12.
- Co-Author, “Optically Triggered Schottky Barrier Diodes in Single Crystal Diamond,” Journal of Diamond and Related Materials, 2005, vol. 14, pp. 499‐503.
- Lead Author, “Trench oxide protection for 10kV 4H‐SiC trench MOSFETs,” IEEE Power Electronics and Drive Systems, 2003, vol. 2, pp. 1354‐58.
- Co-Inventor, “Power electronic package having two substrates with multiple semiconductor chips and interconnections,” U.S. Patent Nos. 7,999,369, 7,557,434, 8,432,030, U.K. Patent Nos. 2,485,087, 2,444,978, 2,444,293, German Patent Nos. 102006040838, 102006040820, Japan Patent No. 5,374,831
- Co-Inventor, “Switching device,” U.S. Patent No. 8,053,783, European Patent No. 1,803,161, Japan Patent No. 5,060,297
- Co-Inventor, “Wide band gap semiconductor device including junction field effect transistor,” U.S. Patent No. 8,274,086, Japan Patent No. 5,326,405
- Co-Inventor, “Gate wiring layout for silicon‐carbide‐based junction field effect transistor,” U.S. Patent Nos. 7,164,154, 7,821,013, Japan Patent No. 4,179,147
